Okmetic participating in projects bridging the RF frequency gap
Filters play a critical role in multi-band RF (Radio Frequency) systems: They control and shape RF signals to ensure efficient, clear, and interference-free communication. As the demand for higher frequencies in RF communication grows, the development of advanced RF technologies becomes increasingly important. This includes RF filters as well as high-frequency applications such as phased array architectures, which are key to the evolution of 5G, 6G, and future technologies.
Existing filter solutions for 4G and 5G are primarily designed for FR1 frequencies below 7 GHz. However, the newly defined FR3 spectrum for 5G-NR and 6G, covering 7-24 GHz or higher frequencies, is currently used mainly in defense and space applications. Okmetic’s primary interest, and the focus of these projects, lies in the increasing widespread use of these frequencies in civilian communications, particularly in mobile networks and devices.
There are currently no commercially viable antenna filter solutions available for the FR3 frequencies that promise to bridge the gap between the lower FR1 (sub-6 GHz) and higher FR2 (mmWave) bands.
Pioneering development of 6G RF technologies
As the demand for higher frequencies in RF communication grows, Okmetic is at the forefront of developing silicon wafers tailored to meet the future needs of RF filters and devices. Through active participation in collaboration projects, we are studying the challenges RF filters and devices will face, paving the way for better and more efficient RF solutions.
To drive innovation in next-generation RF technologies, Okmetic is participating in two Business Finland funded 6G-Bridge projects: and “6G FATE Filters and 6G Technology for 5G-NR and 6G MIMO Arrays” and “6G TERAFRONT THz Front-End for Mobile Applications”.
In the 6G FATE project, RF filters for advanced 5G and 6G applications are being developed, covering a frequency range of 7-24 GHz or above. Meanwhile, the 6G TERAFRONT project focuses on future solutions, exploring new phased array architectures above 100 GHz.
Both projects are led by VTT and comprise participants such as Nokia and Universities in addition to Okmetic.
Okmetic’s High-Resistivity RFSi® Wafers: Advancing Next-Generation RF Technologies
Okmetic’s collaboration in the TERAFRONT and FATE projects enhances our understanding of component advancements while driving the development of wafer products tailored to meet the demands of future high-frequency applications.
Our RFSi® High Resistivity wafers play a crucial role in next-generation RF devices, tackling challenges such as low signal loss and thermal stability, setting a new standard for reliability and efficiency in advanced RF technologies.
Okmetic silicon wafers are produced using the cutting-edge A-MCz® crystal growth process, which minimizes substrate-induced losses. This advanced technology optimizes RF device performance, enabling even the most demanding RF filter and device designs essential for the development of next-generation communication technologies.
Comprehensive Line of High Resistivity RFSI® wafers
Okmetic has a comprehensive RFSi® wafer line consisting of specialty wafers reaching up to over 10,000 ohm-centimeters of bulk resistivities. Resistivity, Crystal Orientation, Oxygen content, and Thickness can be customized to match your product or package needs.
